| PART |
Description |
Maker |
| IDT74FST163209 IDT74FST163209PA IDT74FST163209PF I |
9-BIT BUS EXCHANGE SWITCH CBT/FST/QS/5C/B SERIES, DUAL 9-BIT EXCHANGER, TRUE OUTPUT, PDSO48
EMI/RFI Shielding Fabric; Attenuation @ Peak Frequency:82dB; Surface Resistivity/mm:.005ohm/sq; Fabric Material:Copper/Nickel; Thickness:0.0035"; Length:36"; Width:41"
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| PRS16G |
Switch Fabric
|
Applied Micro Circuits Corporation
|
| PRSQ-80G |
Switch Fabric
|
Applied Micro Circuits Corp.
|
| COSF |
Custom Optical Switch Fabric
|
OPLINK Communications I...
|
| BCM8441 |
16-PORT 1GB, 2G, 4GBPS FIBRE CHANNEL FABRIC SWITCH FOR EMBEDDED APPLICATIONS
|
Broadcom Corp.
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| TQ8033 |
1.5 Gbit/sec 64x33 Expandable Crosspoint Switch
|
TriQuint Semiconductor,Inc.
|
